View IRF8313PBF_4656412.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97145
IRF8313PBF
Applications
l l
HEXFET(R) Power MOSFET
Load Switch DC/DC Conversion
VDSS
RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC
Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260C Reflow) l RoHS Compliant (Halogen Free) Description
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
SO-8
The IRF8313PBF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PBF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 9.7 8.1 81 2.0 1.3 0.016 -55 to + 175
Units
V
c
A
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
W W/C C
Thermal Resistance
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
42 62.5
Units
C/W
Notes through are on page 9
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/5/08
IRF8313PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 23 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 12.5 18.6 1.80 -6.0 --- --- --- --- --- 6.0 1.5 0.9 2.2 1.4 2.9 3.8 2.2 8.3 9.9 8.5 4.2 760 172 87 --- --- 15.5 21.6 2.35 --- 1.0 150 100 -100 --- 9.0 --- --- --- --- --- --- 3.6 --- --- --- --- --- --- --- pF ns nC nC VDS = 15V VGS = 4.5V ID = 8.0A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 9.7A VGS = 4.5V, ID = 8.0A VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 8.0A
V/C Reference to 25C, ID = 1mA m V mV/C A nA S
e e
See Figs. 17a & 17b VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 8.0A RG = 1.8 See Fig. 15a & 15b VGS = 0V VDS = 15V = 1.0MHz
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Typ. --- ---
Max. 46 8.0
Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 20 10 3.1 82 1.0 30 15 A A V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 8.0A, VGS = 0V TJ = 25C, IF = 8.0A, VDD = 15V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF8313PBF
100
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
100
TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
0.1
2.3V
60s PULSE WIDTH
Tj = 25C 2.3V 0.1 1 10 100
60s PULSE WIDTH
0.1 0.1 1 Tj = 175C 10 100
0.01
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
10
TJ = 175C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 9.8A VGS = 10V
1.5
1
TJ = 25C
1.0
0.1 VDS = 15V 0.01 1 2 3 4 5 6
60s PULSE WIDTH
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
www.irf.com
3
IRF8313PBF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
16 ID= 8.0A VDS = 24V 12 VDS = 15V
C, Capacitance (pF)
1000
Ciss Coss Crss
8
100
4
10 0.1 1 10 100
0 0 2 4 6 8 10 12 14 Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
TJ = 175C 10
ID, Drain-to-Source Current (A)
100 100sec 10 1msec
TJ = 25C 1
10msec 1 TA = 25C Tj = 175C Single Pulse 0.1 0 1 10 100
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF8313PBF
10
2.5
VGS(th), Gate Threshold Voltage (V)
8
ID , Drain Current (A)
2.0 ID = 25A 1.5
ID = 250A
6
4
2
1.0
0 25 50 75 100 125 150 175
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C )
TA, Ambient Temperature (C)
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
Ri (C/W)
R1 R1 J 1 2 R2 R2 R3 R3 R6 R6 R7 R7 R8 R8 a 1 2 3 3 4 4 5 5 6 6 7 7 8 8
(sec)
0.000010 0.000030 0.000020 0.001289 0.000340 0.009747 27.798341 0.575346
1
J
R4 R4
R5 R5
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
0.1396039 0.4048955 0.5273926 1.2084906 1.5779475 7.0394610 18.0102679 33.5929564
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100 1000
0.01 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF8313PBF
m RDS (on), Drain-to -Source On Resistance ( )
38
200
EAS, Single Pulse Avalanche Energy (mJ)
34 30 26 22 18 14 10 2.0 4.0 6.0
ID = 9.8A
160
ID 3.0A 5.0A BOTTOM 8.0A
TOP
120
80
TJ = 125C TJ = 25C
40
8.0
10.0
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
D.U.T
IAS tp
+ V - DD
A
VGS 20V
0.01
I AS
Fig 14a. Unclamped Inductive Test Circuit
RD
Fig 14b. Unclamped Inductive Waveforms
VDS 90%
VDS VGS RG
D.U.T.
+
- VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr td(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
www.irf.com
IRF8313PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
L
0
DUT 1K 20K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
www.irf.com
7
IRF8313PBF
D A
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
B 5
DIM A A1 b INCH E S MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MIL L IME T E R S MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H
1
2
3
4
.050 B AS IC .025 B AS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 B AS IC 0.635 B AS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
K L y
e1
A
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 CAB
8X L 7
FOOT PRINT
NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E.
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECTIFIER LOGO
XXXX F7101
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRF8313PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.43mH, RG = 25, IAS = 8.0A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRF8313PBF
Orderable Part number IRF8313PBF IRF8313TRPbF Package Type SO-8 SO-8 Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 4000 Note
Qualification Information
Qualification Level Moisture Sensitivity Level RoHS Compliant Consumer (per JEDEC JESD47F guidelines) SO-8 MSL1 (per JEDEC J-STD-020D) Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http//www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/08
10
www.irf.com

▲Up To Search▲

Price & Availability of IRF8313PBF

	To Download IRF8313PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .